Paper on the world-first CMOS-integrated MTJ p-bit published in IEEE Elect. Dev. Lett.
Our paper “130-nm CMOS-integrated superparamagnetic tunnel junction-based p-bit” by J.-Y. Yoon, N. Caçoilo, A. Madhavan, J. J. McClelland, S. Kanai, H. Ohno, S. Fukami, and W. A. Borders was published in the Early Access area of IEEE Electron Device Letters.
Press release: Spintronics P-Computer Ready for Scale-up