Paper published in an Early Access area of IEEE Journal of Solid-State Circuits
Our paper “Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition” by M. Natsui, A. Tamakoshi, H. Honjo, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Y. Ma, H. Shen, S. Fukami, H. Sato, S. Ikeda, H. Ohno, T. Endoh, and T. Hanyu was published in an Early Access area of IEEE Journal of Solid-State Circuits.



